发明名称 METHOD FOR MANUFACTURING HEAT TREATMENT APPARATUS AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a sudden stop due to discontinuity in a resistance heat generating body and generation of a defective products due to the sudden stop in a heat treatment apparatus provided with the resistance heat generating body. SOLUTION: In the heat treatment apparatus, a resistance heat generating body 3 such as a Kanthal line or the like is given an electricity through thyristors 11 to 13 from a transformer 14, the resistance heat generating body 3 is connected with a frequency scanning function 21a that scans the frequency to be applied to the resistance heat generating body 3 at a specified frequency range, and a high-frequency power supply 21 provided with a detection circuit 21b to detect electric characteristics such as reactance or inductance, etc. at that time. The detection circuit 21b is connected with a waveform monitor 22 equipped with a display 22a or the like, which visually displays a waveform showing a change in electric characteristic corresponding to the frequency scanning on the display 22a, and it detects any abnormality of the resistance heat generating body 3 on the basis of a difference of waveform of the resistance heat generating body 3 at normal time and abnormal time (when it is deformed). COPYRIGHT: (C)2004,JPO
申请公布号 JP2004087681(A) 申请公布日期 2004.03.18
申请号 JP20020245312 申请日期 2002.08.26
申请人 RENESAS TECHNOLOGY CORP 发明人 HOSHINO AKIO;SUZUKI TAKASHI;ONO DAISUKE
分类号 C23C16/46;F27B17/00;F27D21/00;F27D21/02;F27D21/04;H01L21/205;H01L21/22;H01L21/324;(IPC1-7):H01L21/324 主分类号 C23C16/46
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