Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature

摘要

One embodiment of the present invention provides a system that uses an exposure through a second mask to assist an exposure through a phase shifting mask in printing a tight space adjacent to a large feature. During operation, the system exposes a photoresist layer on the surface of a semiconductor wafer through the phase-shifting mask. This phase-shifting mask includes phase shifters that define a space between a first feature and a second feature, wherein the first feature is so large that the effectiveness of phase shifting is degraded in defining the space. Moreover, the degradation in phase shifting and the tightness of the space cause the space not to print reliably when exposed through the phase shifting mask alone. To alleviate this problem the system exposes the photoresist layer through the second mask, wherein the exposure through the second mask assists in exposing the space between the first feature and the second feature so that the space prints reliably.