| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a highly accurate V groove structure article for a silicon substrate. SOLUTION: The silicon substrate 20 having a (100) plane on the surface and a b-axis at an OF (orientation flat) part is used. The silicon substrate 20 is adjusted so that oxygen concentration down to depth where at least a three-dimensional structure is formed, for example, down to a depth of 60μm can be≤3×10<SP>18</SP>Atoms/cm<SP>3</SP>and carbon concentration can be≤4×10<SP>15</SP>Atoms/cm<SP>3</SP>. A silicone oxide film pattern is formed on the surface of the silicon substrate 20, and etching is performed with the silicon oxide film pattern as a mask by a KOH solution. The etching advances in an anisotropic manner and a V groove 30 extending perpendicularly to the face of paper with a V-shaped cross section is formed. COPYRIGHT: (C)2004,JPO
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