| 摘要 |
PURPOSE: To provide a solid state imaging device having 4Tr pixels, and its image reading method in which the degree of freedom is high in the design of a wiring layer and a good image having no "blur" nor "distortion" can be obtained. CONSTITUTION: In the solid state imaging device having 4Tr pixels, a signal line TG being connected with the gate electrode 28TG of a transfer transistor at a pixel of n-th row and a signal line Select being connected with the gate electrode 28SEL of a select transistor at a pixel of (n+1)th row are constituted of a common signal line, and the gate electrode 28TG at the pixel of n-th row and the gate electrode 28SEL at the pixel of (n+1)th row are constituted of one continuous pattern of the same conductive layer.
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