发明名称 |
Method for fabricating carbon nanotube device |
摘要 |
A method for fabricating a carbon nanotube device, characterized in that selective chemical vapor-phase deposition is performed on the lateral sides of the portion where the carbon nanotube device is to be formed defined by using the density of catalyst grains as well as etching technique so as to position the carbon nanotube device according to the arrangement of the catalyst grains. Therefore, the carbon nanotube device can be formed on a large-area chip can be achieved so as to further fabricate arrays of carbon nanotube memories and transistors.
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申请公布号 |
US2004043148(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020233603 |
申请日期 |
2002.09.04 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
WEI JENG-HUA;WANG HUNG-HSIANG;KAO MING-JER |
分类号 |
C01B31/02;C23C16/04;C23C16/26;C30B25/00;H01L51/05;H01L51/30;(IPC1-7):C23C16/26 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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