MAGNETORESISTIVE LAYER SYSTEM AND SENSOR ELEMENT COMPRISING SAID LAYER SYSTEM

摘要

Disclosed is a magnetoresistive layer system (5), wherein a layer arrangement (15) is provided in the vicinity of a magnetoresistive layer stack (14), particularly one working on the basis of the GMR or AMR effect. Said layer arrangement produces a magnetic field, which acts upon the magnetoresistive layer stack (14), and contains at least one soft-magnetic layer (13). The invention also relates to a sensor element especially used for the detection of magnetic fields in relation to intensity and/or direction, comprising said layer system (5).