| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To quantitatively estimate the influence of local flare on a pattern to be exposed in lithography, and to further correct the same. <P>SOLUTION: By utilizing a line pattern 1, which is a pattern for measurement, and a ring-band pattern 2 of a ring-band shape, which encircles the line pattern 1 and generates flare by forming a light transmitting region for generating local flare on the line pattern 1, the influence of the local flare by the ring-band pattern 2 on the line pattern 1 is measured and evaluated by measuring the line width of the line pattern 1. Furthermore, by utilizing the measured value, the influence of the local flare on each real pattern is corrected. <P>COPYRIGHT: (C)2004,JPO</p> |
