HETERO-JUNCTION BIPOLAR TRANSISTORS AND EPITAXIAL WAFER THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer for an HBT (Hetero junction Bipolar Transistor) having an emitter-base interface of low density at the level of a recombination center. SOLUTION: In the epitaxial wafer for the HBT provided with a GaAs base layer 6 and an emitter layer 5 consisting of InGa or AlGaAs, a super lattice spacer layer 11 consisting of AlGaAs/GaAs is inserted between the base layer 6 and the emitter layer 5 to improve a current amplification factorβ. COPYRIGHT: (C)2004,JPO