发明名称 COATING LIQUID FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide, as a material for an insulating film for a semiconductor device or the like, a coating liquid for forming an insulating film which uses a siloxane polymer, with which an insulating film having a superior relative permittivity, especially an insulating film for semiconductor manufacturing equipment, can be formed. SOLUTION: The coating liquid for forming an insulating film for a semiconductor device contains an Si atom combined with at least one kind of organic group, and a siloxane polymer whose branching frequency A found by a spectrum observed by small-angle X-ray scattering is within a range of -2.0>A>-2.8 (A is a dimensionless value). COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063788(A) 申请公布日期 2004.02.26
申请号 JP20020220097 申请日期 2002.07.29
申请人 JSR CORP 发明人 HAYASHI EIJI
分类号 C08G77/04;C09D183/04;H01L21/312;H01L21/768;(IPC1-7):H01L21/312 主分类号 C08G77/04
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