| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a nitride semiconductor superior in crystallinity on a silicon substrate. <P>SOLUTION: A buffer layer is formed by laminating two types of compound semiconductors selected from a II-III-VI group compound semiconductor, a I-III-VI group compound semiconductor, a II-IV-V group compound semiconductor, and a gallium nitride semiconductor, which have intermediate lattice constants between silicon and a III group nitride semiconductor which is to be formed on the buffer layer and constituting a superlattice structure. A compound semiconductor layer which is nearest to the silicon substrate is formed of the compound semiconductor having the lattice constant nearest to silicon. A compound semiconductor layer on an uppermost layer in the buffer layer is formed of the compound semiconductor having the lattice constant nearest to the III group nitride semiconductor. Then, a III group nitride semiconductor layer is formed on the buffer layer. <P>COPYRIGHT: (C)2004,JPO |
