发明名称 Phase-changeable devices having an insulating buffer layer and methods of fabricating the same
摘要 Phase-changeable devices and method of fabricating phase-changeable devices are provided. The phase-changeable devices have a first insulating layer disposed on a first electrode. A heater plug extends through the first insulating layer and contacts the first electrode. A buffer insulating layer region is disposed on the first insulating layer opposite the first electrode and a phase-changeable material region is disposed on the buffer insulating layer region. The phase-changeable material region may extend into the buffer insulating layer region. The phase-changeable material region contacts a surface of the heater plug. A second electrode disposed on the phase-changeable material region. Spacers may be provided on sidewalls of the buffer insulating layer region between the phase-changeable material region and the buffer insulating layer region. The buffer insulating layer region may have a thermal expansion coefficient between the thermal expansion coefficients of the first insulating layer and the phase-changeable material region.
申请公布号 US2004037179(A1) 申请公布日期 2004.02.26
申请号 US20030620830 申请日期 2003.07.16
申请人 LEE SE-HO 发明人 LEE SE-HO
分类号 H01L27/10;G11C16/02;H01L27/115;H01L27/24;H01L45/00;(IPC1-7):G11B5/09;G11B15/52;G11B19/02;G11B20/10 主分类号 H01L27/10
代理机构 代理人
主权项
地址