发明名称 |
Phase-changeable devices having an insulating buffer layer and methods of fabricating the same |
摘要 |
Phase-changeable devices and method of fabricating phase-changeable devices are provided. The phase-changeable devices have a first insulating layer disposed on a first electrode. A heater plug extends through the first insulating layer and contacts the first electrode. A buffer insulating layer region is disposed on the first insulating layer opposite the first electrode and a phase-changeable material region is disposed on the buffer insulating layer region. The phase-changeable material region may extend into the buffer insulating layer region. The phase-changeable material region contacts a surface of the heater plug. A second electrode disposed on the phase-changeable material region. Spacers may be provided on sidewalls of the buffer insulating layer region between the phase-changeable material region and the buffer insulating layer region. The buffer insulating layer region may have a thermal expansion coefficient between the thermal expansion coefficients of the first insulating layer and the phase-changeable material region.
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申请公布号 |
US2004037179(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030620830 |
申请日期 |
2003.07.16 |
申请人 |
LEE SE-HO |
发明人 |
LEE SE-HO |
分类号 |
H01L27/10;G11C16/02;H01L27/115;H01L27/24;H01L45/00;(IPC1-7):G11B5/09;G11B15/52;G11B19/02;G11B20/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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