发明名称 |
Power semiconductor component having a mesa edge termination |
摘要 |
A power semiconductor component having a mesa edge termination is described. The component has a semiconductor body with first and second surfaces. An inner zone of a first conductivity type is disposed in the semiconductor body. A first zone is disposed in the semiconductor body and is connected to the inner zone. An edge area outside of the first zone has areas etched out. A second zone of a second conductivity type is disposed in the semiconductor body and is connected to the inner zone, and a boundary area between the second zone and the inner zone defines a pn junction. A field stop zone is adjacent the first surface in the edge area. The field stop zone is formed of the first conductivity type and is embedded in the semiconductor body, and the field stop zone is connected to the first zone and to the inner zone.
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申请公布号 |
US6696705(B1) |
申请公布日期 |
2004.02.24 |
申请号 |
US20000660276 |
申请日期 |
2000.09.12 |
申请人 |
EUPEC EUROPAEISCHE GESELLSCHAFT FUER LEISTUNGSHALBLEITER MBH & CO. KG |
发明人 |
BARTHELMESS REINER;SCHMIDT GERHARD |
分类号 |
H01L29/744;H01L21/329;H01L29/06;H01L29/739;H01L29/78;H01L29/861;(IPC1-7):H01L29/861;H01L29/74;H01L23/58;H01L31/075 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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