| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of the manufacturing processes of NMOS thin-film transistors having LDD structures. SOLUTION: N-type impurities are implanted with high consentration into n-type high-concentration impurity regions 37c, 38c of NMOS thin-film transistors having LDD structures, via contact holes 45, 46 respectively for connections of their source-drain electrodes which are formed in an interlayer and gate insulation films 44, 40 provided on the regions 37c, 38c. Therefore, the number of the formations of their resist patterns used as impurity implanting masks can be eliminated by one. Although the n-type impurities are implanted with high concentration into the source-drain regions 39b of a PMOS thin-film transistor via contact holes 47 too, since p-type higher-concentration impurities than the n-type impurities are already implanted into the regions 39b, the source-drain regions 39b are maintained as p-type high-concentration impurity regions. COPYRIGHT: (C)2004,JPO |
