PRECURSOR FOR FORMING HfO2 LAYER AND METHOD FOR FORMING THE HfO2 LAYER USING THE SAME

摘要

PURPOSE: A precursor for forming an HfO2 layer and a method for forming the HfO2 layer using the same are provided to be capable of improving electrical characteristics while a low temperature depositing process is carried out, and improving deposition speed and step coverage. CONSTITUTION: A precursor for forming an HfO2 layer is formed by coupling HfCl4 and nitrogen compound. Preferably, the nitrogen compound is one selected from a group consisting of pyridine based nitrogen compound, amine based nitrogen compound, and nitride based nitrogen compound. Preferably, the amine based nitrogen compound is the compound formed by the first chemical equation of 'NR1R2R3'. At this time, the 'R1', 'R2', 'R3' are predetermined alkyl radicals, respectively.