发明名称 METHOD FOR PREPARING ALUMNA COATING FILM HAVING alpha-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE
摘要 <p>A method for preparing an alumina coating film having an alpha-type crystal structure as a primary structure wherein the alumina coating film is formed on a substrate through the sputtering of an aluminum metal in an atmosphere containing an oxidizing gas, characterized in that it comprises a step of forming a film under conditions suitable for the formation of an alumina having alpha-type crystal structure as an initial step of the film formation, for example, an alumina having alpha-type crystal structure is formed under an electric discharge in a poisoning mode only in the initial step of the film formation. The method allows the film formation with good efficiency of an alumina coating film having an alpha-type crystal structure as a primary structure.</p>
申请公布号 WO2004015162(A1) 申请公布日期 2004.02.19
申请号 WO2003JP10115 申请日期 2003.08.08
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO;KOHARA, TOSHIMITSU;TAMAGAKI, HIROSHI;IKARI, YOSHIMITSU 发明人 KOHARA, TOSHIMITSU;TAMAGAKI, HIROSHI;IKARI, YOSHIMITSU
分类号 C23C14/00;C23C14/08;(IPC1-7):C23C14/08;C23C14/34;B23B27/14 主分类号 C23C14/00
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