发明名称 |
METHOD FOR PREPARING ALUMNA COATING FILM HAVING alpha-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE |
摘要 |
<p>A method for preparing an alumina coating film having an alpha-type crystal structure as a primary structure wherein the alumina coating film is formed on a substrate through the sputtering of an aluminum metal in an atmosphere containing an oxidizing gas, characterized in that it comprises a step of forming a film under conditions suitable for the formation of an alumina having alpha-type crystal structure as an initial step of the film formation, for example, an alumina having alpha-type crystal structure is formed under an electric discharge in a poisoning mode only in the initial step of the film formation. The method allows the film formation with good efficiency of an alumina coating film having an alpha-type crystal structure as a primary structure.</p> |
申请公布号 |
WO2004015162(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
WO2003JP10115 |
申请日期 |
2003.08.08 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO;KOHARA, TOSHIMITSU;TAMAGAKI, HIROSHI;IKARI, YOSHIMITSU |
发明人 |
KOHARA, TOSHIMITSU;TAMAGAKI, HIROSHI;IKARI, YOSHIMITSU |
分类号 |
C23C14/00;C23C14/08;(IPC1-7):C23C14/08;C23C14/34;B23B27/14 |
主分类号 |
C23C14/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|