| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device in which uniform salicide metal layers are formed, which has a semiconductor element of a satisfactory characteristic and flatness of an interlayer insulating film can easily be secured. <P>SOLUTION: A surface side of a built-in film 102 formed on a semiconductor substrate 100 is covered by a protection film 154 of a material having resistance against rare HF. A cleaning processing by rare HF is performed on the semiconductor device. In the cleaning processing, a fear that the built-in insulating film 102 melts by rare HF can be avoided since the built-in insulating film 102 is covered by the protection film 154. Then, the salicide metal layers 160, 162, 170 and 172 are formed on surface sides of gate electrodes 120 and 122 and diffusion layers 130 and 132. Thus, the uniform salicide metal layers 160, 162, 170 and 172 can be obtained. <P>COPYRIGHT: (C)2004,JPO |
