| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser having a wide tuning range, in which both mode stability and high optical output are satisfied. <P>SOLUTION: The distributed Bragg reflector semiconductor laser diode (DBR-LD) comprises a gain region 3, a phase region 2 and a DBR1, wherein the DBR1 and the phase region 2 are single transverse mode waveguides and the gain region 3 consists of a single transverse mode waveguide 3a and a multi-mode interference waveguide 3b. In the MMI waveguide 3b, a light, entering the single transverse mode waveguide 3a, is delivered to a single transverse mode waveguide 3a at the other end with an extremely low loss, because of the interference effect. When the MMI waveguide 3b is introduced to the gain region 3 of a uniaxial mode light source, i.e. the DBR-LD, length of the gain region 3 can be shortened, without lowering the optical output, and mode stability is enhanced. <P>COPYRIGHT: (C)2004,JPO |
