发明名称 LEVEL CONVERTER CIRCUIT
摘要 The source of a p-channel MOSFET of a level conversion unit is connected to a supply terminal which receives supply voltage VDD. The drain is connected to an output node NO and the gate is connected to an input node I 2 . The source of a n-channel MOSFET is connected to an input node I 2 , the drain is connected to the output node NO and the gate is connected to the supply terminal which receives the supply voltage VDD. Input signals CLK 1 and CLK 2 change complementarily and difference of voltage between the high level and low level of the signals is smaller than difference between the supply voltage VDD and the ground voltage.
申请公布号 KR20040015342(A) 申请公布日期 2004.02.18
申请号 KR20047000337 申请日期 2002.07.10
申请人 发明人
分类号 H03K19/0185;G09G3/32;G09G3/36;H03K3/356 主分类号 H03K19/0185
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