发明名称 |
Semiconductor device and its manufacture |
摘要 |
A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.
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申请公布号 |
US6693002(B2) |
申请公布日期 |
2004.02.17 |
申请号 |
US20020241521 |
申请日期 |
2002.09.12 |
申请人 |
FUJITSU LIMITED KABUSHIKI KAISHA TOSHIBA;TOSHIBA KK |
发明人 |
NAKAMURA SHUNJI;HATADA AKIYOSHI;FUKUZUMI YOSHIAKI |
分类号 |
H01L21/8242;H01L21/02;H01L27/108;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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