| 摘要 |
PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a pattern having an interval not greater than a resolution limit by using negative photoresist. CONSTITUTION: An underlying layer(210) is formed on a semiconductor substrate(200). A photoresist layer is formed on the underlying layer. The first exposure process is performed on the photoresist layer by using a pattern formation mask. The second exposure process is performing on the photoresist layer by using a gate formation mask. The photoresist layer is developed to form a photoresist layer pattern. The underlying layer is patterned by using the photoresist layer pattern as a mask. The photoresist layer pattern is removed to form an underlying layer pattern.
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