Semiconductor device pattern formation comprises performing etching process of formed antireflective films to form micro-bends, and coating photoresist above anti-reflective films with micro-bends, and exposing coated films to light source

摘要

Patterns of a semiconductor device are formed by performing an etching process of formed antireflective films to form micro-bends; and coating photoresist above the anti-reflective films with micro-bends, exposing the coated anti-reflective films to light source, and then developing the same to form desirable photoresist patterns. Formation of patterns of a semiconductor device comprises applying a first organic anti-reflective coating composition onto a surface of a layer to be etched, and conducting a baking process to form a first anti-reflective film; applying a second organic anti-reflective coating composition on the upper portion of the first anti-reflective film, with a different refractive index and light absorbency from the first organic anti-reflective composition, and conducting a further baking process to form a second anti-reflective film; performing an etching process of the formed antireflective films to form micro-bends; and coating photoresist above the anti-reflective films with micro-bends, exposing the coated anti-reflective films to light source and then developing the same to form desirable photoresist patterns.