| 摘要 |
PROBLEM TO BE SOLVED: To prevent characteristics of an inductor device provided on a semiconductor device from being deteriorated. SOLUTION: A high resistance region 20 is provided below an inductor device 19 formed on a semiconductor substrate 11, and is formed deeper than the high resistance region 20 than well regions 21A, 21B of p and n channel MOS transistors 14A, 14B. Consequently, an eddy current is prevented from being induced owing to a magnetic flux generated by the inductor device 19. COPYRIGHT: (C)2004,JPO
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