| 发明名称 |
Memory device and method of operating the memory device |
| 摘要 |
A memory device is configured to guarantee a high degree of flexibility and a compact construction. To this end, the existing plate line device of the memory device which functions on the basis of a hysteresis process is configured to detect the state of a memory capacitor and hence, the information that is stored.
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| 申请公布号 |
US2004022117(A1) |
申请公布日期 |
2004.02.05 |
| 申请号 |
US20030458965 |
申请日期 |
2003.06.11 |
| 申请人 |
HOENIGSCHMID HEINZ;MULLER GERHARD |
发明人 |
HOENIGSCHMID HEINZ;MULLER GERHARD |
| 分类号 |
G11C8/02;G11C11/15;G11C11/22;H01L21/8246;H01L27/105;(IPC1-7):G11C8/02 |
主分类号 |
G11C8/02 |
| 代理机构 |
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