| 摘要 |
PROBLEM TO BE SOLVED: To prevent metal of a thin film resistor from causing an oxidization reaction and hereby being broken. SOLUTION: A CrSi film 22 is formed on a silicon substrate via an insulating film, and at opposite ends of which electrode patterns 24a, 24b are formed. A slit 23 is formed longitudinally at the center of the CrSi film 22. An aluminum electrode 25 is disposed via an insulating film on the CrSi film 22 so as to intersect an aluminum electrode 25. Even when a foreign substance P remains in a manufacturing process, and water invades, overall oxidization on the CrSi film 22 is prevented at the slit 23 to prolong the time until it reaches a broken state. COPYRIGHT: (C)2004,JPO
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