PURPOSE: A method for fabricating a metal interconnection is provided to improve planarization of a plating layer in an electro-polishing process by forming an Au layer under the plating layer. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(10) to form a pattern. A barrier metal layer(14) and a seed layer(16) are formed in the pattern. A metal layer is formed on the resultant structure. The plating layer is formed in the pattern by an electroplating process. The plating layer is polished by an electro-polishing process.
