| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of easily removing non-uniformity of contact resistance by using a dummy storage node. CONSTITUTION: A capacitor oxide layer(42) is formed on a semiconductor substrate(31). A concave pattern and a dummy concave pattern are simultaneously formed by etching the capacitor oxide layer. A storage node(45a) and a dummy storage node(45b) are formed in the concave pattern and the dummy concave pattern, respectively. A dielectric film(46) is formed on the resultant structure. A plate(47) having the first region(47a) for forming a contact hole and the second region(47b) filled in the concave pattern is formed on the dielectric film. After forming an interlayer dielectric on the resultant structure, a contact hole(50) is formed to expose the first region(47a) by etching the interlayer dielectric. A metal interconnection is formed to connect the plate through the contact hole.
|
