METHOD FOR FORMING PHASE SHIFT MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a phase shift mask of a semiconductor device is provided to be capable of easily controlling bias with the width of a spacer. CONSTITUTION: The first shielding layer is formed at the upper portion of a transparent substrate(31). At this time, the transparent substrate is defined with 180° transmitting region and shielding region. A photoresist pattern is formed at the upper portion of the first shielding layer for selectively exposing the resultant structure. An etching process is carried out at the first shielding layer and the quartz substrate by using the photoresist pattern as an etching mask. After the photoresist pattern and the first shielding layer are removed, the second shielding layer(37) is formed on the entire surface of the resultant structure. Then, a patterning process is carried out at the second shielding layer for forming the second shielding spacer.