Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells

摘要

A circuit is provided for the non-destructive, self-normalizing reading-out of MRAM memory cells. Accordingly, read currents of a memory cell are normalized by currents that are maintained at a voltage at which the size of these currents is independent of the cell content. The circuit has a simple construction and without great expenditure, permits the normalization of a read signal.