| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electrostatic capacity type acceleration sensor of good productivity which uses a semiconductor process. <P>SOLUTION: Boron ion is implanted on the surface side of an n-type single crystal silicon substrate 11. The boron is thermally diffused to form a p-type low resistance layer 12 which is etched with a beam part 24 and a part 27 that is to be a displacement electrode left out. On the surface side of the silicon substrate 11, a silicon oxide layer 13 which is to be a sacrifice film, a fixed electrode layer 15, and a silicon nitride film layer 17 are formed. Then, from the rear surface side of the substrate, an anisotropic etching is performed in a KOH aqueous solution with the p-type low resistance layer as an etch stopper. Lastly, a silicon oxide film 16 is removed in hydrofluoric acid aqueous solution from the rear surface side of the substrate to form a cavity layer 19. <P>COPYRIGHT: (C)2004,JPO |
