| 摘要 |
PURPOSE:To form a thick SiO2 film, to smooth large stepped difference without cracks and to avoid the disconnection of wiring by exposing the film to charged particles during first and second heat treatment when the SiO2 film is formed in an N2 atmosphere. CONSTITUTION:Steep stepped difference 26 is formed at the end sections of poly Si wiring 23 on the field oxide film 22 of a Si substrate 21 in a PSG24 coating the wiring 23. A solution, the principal ingredient thereof is a Si compound, is rotary-applied, and the SiO2 film 25 is formed through heat treatment at approximately 300 deg.C in N2. When P ion beams 27 are irradiated onto the film 25, the film 25 is damaged and stress is relaxed and second heat treatment is executed in N2 at 400-1,000 deg.C, cracks are difficult to be generated, the more the quantity of ions implanted is, the larger an effect is, and cracks are not formed even when film thickness is 10<4> Angstrom . Accordingly, stepped difference 26 can be smoothed sufficiently, the wiring is not disconnected even when Al wiring is stacked, and the reliability and yield of the device are improved. |
