| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having both forward characteristics obtained through grinding with a whetstone of around #360 and the strength of a semiconductor chip obtained through grinding with a whetstone of #2000 or more, and to provide a method for manufacturing the same. SOLUTION: Patterns are formed in a first principal plane of a silicon wafer, and then a second principal plane is ground by using a whetstone of #1500 to #2000, so that the surface coarseness of the second principal plane falls within the ranges of an arithmetic average coarseness Ra of from 0.003μm or more to 0.005μm or below, and a maximum height Ry of from 0.01μm or more to 0.03μm or below. Further, the second principal plane is etched with a liquid comprising nitric acid and sulfuric acid, so that the surface coarseness of the second principal plane falls within the ranges of the arithmetic average coarseness Ra of from 0.05μm or more to 0.3μm or below, and the maximum height Ry of from 0.3μm or more to 1.3μm or below. COPYRIGHT: (C)2004,JPO
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