| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing oxides without damaging a light-emitting end face and a light-reflecting end face of a semiconductor laser when the oxides are removed by plasma ion irradiation before coating is applied on the end faces. SOLUTION: When a semiconductor light-emitting device is produced, the device comprising at least a first cladding layer, an active layer, and a second cladding layer stacked on a substrate, and having coating films on a light-emitting end face and a light-reflecting end face; before the coating film is formed on at least light-emitting end face, plasma ions generated in a self-bias voltage condition of 50 V or less are irradiated on the end face. COPYRIGHT: (C)2004,JPO
|
