发明名称 Oxide cathode for electron gun with a differentially doped metallic substrate
摘要 <p>The metallic substrate of this cathode has a thickness &le; 100 mu m and contains a plurality of reducing agents as Si or Al and : on the top face 111, 0.005 % &lt; Mg &le; 0.02 %, Si or Al &le; 0.025 %, and W &le; 0.008 %, on the bottom face 122, Mg weight concentration is inferior to the Mg weight concentration on the top face, and Si or Al weight concentration is superior to Si or Al weight concentration on the top face and superior to 0.02 %. &lt;??&gt;Lifetime is maximized and turn-on-time is minimized. &lt;IMAGE&gt;</p>
申请公布号 EP1385190(A1) 申请公布日期 2004.01.28
申请号 EP20020291859 申请日期 2002.07.24
申请人 THOMSON LICENSING S.A. 发明人 ROQUAIS, JEAN-MICHEL;WIERSCHKE, D.J.
分类号 H01J1/14;H01J1/20;H01J1/26;H01J29/48;(IPC1-7):H01J1/142 主分类号 H01J1/14
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