发明名称 |
Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications |
摘要 |
An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm<3 >or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm<3 >or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.
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申请公布号 |
US2004012089(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20030346451 |
申请日期 |
2003.01.17 |
申请人 |
RANTALA JUHA T.;REID JASON S.;VISWANATHAN NUNGAVRAM S.;TORMANEN T. TEEMU T. |
发明人 |
RANTALA JUHA T.;REID JASON S.;VISWANATHAN NUNGAVRAM S.;TORMANEN T. TEEMU T. |
分类号 |
C08G77/24;C08G77/58;C09K13/00;H01L;H01L21/312;H01L21/768;H01L21/8238;H01L23/48;H01L23/522;H01L23/532;H01L35/24;(IPC1-7):H01L23/48 |
主分类号 |
C08G77/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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