| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, having sufficiently high mechanical strength, while using an insulating-film material of a low dielectric constant, which has insufficient mechanical strength, is used to reduce the capacitance among interconnect wires. SOLUTION: A first insulating film is deposited on a silicon substrate, and a wiring groove 14 is formed in the first insulating film. A reformed layer 15 is formed, by reforming the surface of the first insulating film using oxygen plasma. Then, a metal film 16 is embedded in the wiring groove 14 to form metal wiring. Successively, the reformed layer 15 is removed by wet etching to form slits 17, into which a third insulating film is embedded, to form a wiring structure. As a result, interconnect wires that are mutually neighbored are separated by the low dielectric-constant film, while the wires that are spaced widely are separated by the insulating film of high mechanical strength. Therefore, the capacitance between the interconnect wires can be reduced, while the mechanical strength of the global wiring structure is maintained. COPYRIGHT: (C)2004,JPO |
