PHASE SHIFT MASK AND PRODUCTION METHOD THEREFOR AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A phase shift mask for ultra-short ultraviolet ray capable of being actually constituted by properly combining refractive index and absorption coefficient even if a ultra-short ultraviolet ray is reflected. A phase shift mask (10) comprising a reflection multi-layer film substrate (11), and a first region (12a) and a second region (12b) formed on the substrate (11) is formed by specifying the phase and reflectance of a reflection light of a ultra-short ultraviolet ray obtained from an arbitrary complex refractive index for a ultra-short ultraviolet ray and an arbitrary film thickness. Respective film thicknesses and complex refractive indexes of a formed film in the first region (12a) and a formed film in the second region (12b) are set based on the specified results so as to produce a specified phase difference between the reflection light of a ultra-short ultraviolet ray in the first region (12a) and the reflection light of a ultra-short ultraviolet ray in the second region (12b).