| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a correction method for a figure pattern for a semiconductor device and a manufacturing method for a semiconductor device, which can suppress increase in chip area, while resolving the hindrance of securing of gate extruding amount which is brought about by a corner-rounding phenomenon at miniaturization. <P>SOLUTION: This correction method for a figure pattern for a semiconductor device, which does not influence the concave-shaped diffused layer corresponding part of a figure pattern for a semiconductor device, and another pattern that exists near a gate includes a process 102, which detects the concave-shaped diffused layer corresponding part, and a process 103 which corrects the concave-shaped diffused layer corresponding part or a transistor gate corresponding part, which protrudes from the concave-shaped diffused layer corresponding part, so as to secure projection of the gate from the concave-shaped diffused layer corresponding part with respect to the corner-rounding phenomenon. <P>COPYRIGHT: (C)2004,JPO</p> |
