| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for protecting a semiconductor wafer to prevent a break of a semiconductor wafer even if semiconductor wafer is made as thin as 200μm or less. SOLUTION: The method for protecting the semiconductor wafer includes a first step of carrying out sticking of a film on a semiconductor wafer surface for circuits of the, a second step of carrying out grinding of the surface of with no circuit mechanically, and a third step of eliminating a crushed layer produced by mechanical grinding the surface with not circuit without exfoliating the film for the semiconductor wafer surface. In this method, it provides a semiconductor wafer safely measure characterized by using at least one layer of a high temperature conductivity film whose thermal conductivity (α) is 0.18 or more W/mxK and whose thickness is 50-300μm as the substrate film or the film for the surface protection used at these steps. COPYRIGHT: (C)2004,JPO
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