| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To operate an SRAM (static random access memory) circuit at a state that an operation margin is reduced, particularly in a low power source voltage state by increasing or optimizing the operation margin of the SRAM circuit. <P>SOLUTION: In the SRAM circuit, a power source voltage of a memory cell is adjusted, an optimal voltage is compared with a power source voltage of an auxiliary circuit by detecting a threshold voltage of a manufactured transistor, and substrate bias is further controlled. <P>COPYRIGHT: (C)2004,JPO</p> |
