| 摘要 |
PURPOSE: A method for forming a borderless contact hole of a semiconductor device is provided to be capable of preventing the shortage phenomenon between a source/drain region and a well region, and improving isolation characteristics. CONSTITUTION: After sequentially forming the first and second pad layers at the upper portion of a semiconductor substrate(100a), a trench(105) is formed by selectively etching the resultant structure. Then, an isolation layer(160) is formed at the inner portion of the trench. At this time, the isolation layer is made of the first isolation layer(130a), a barrier(140a), and the second isolation layer(150a). A self-alignment silicon layer(170) and an etching stop layer(180) are sequentially formed at the upper portion of the resultant structure. After depositing a PMD(Polysilicon-Metal-Insulator) material layer(190) on the entire surface of the etching stop layer, a borderless contact hole(200) is formed at the predetermined inner portion of the resultant structure.
|
