| 摘要 |
1,184,319. Semi-conductor devices. R.C.A. CORPORATION. 4 Dec., 1968 [27 Dec., 1967], No. 57587/68. Heading H1K. A process for manufacturing a semi-conductor article, having a die 7 with a number of semiconductor active regions, on whose surface is a plurality of electrically conductive bondable lands 8 each connected to at least one active region in the die, comprises the steps of placing a metallic film framework 18 of connecting fingers 9 adjacent to the die so that each finger end 10 registers with a corresponding land 8 of the die, and bonding each finger end to its corresponding land to form a mechanical joint of good electrical conductivity, then severing the fingers from the framework prior to encapsulation or packaging to provide a die supporting a plurality of isolated outwardly extending fingers. The bond between die lands and fingers may be welded, ultrasonically bonded or soldered, the fingers being of copper, phosnic bronze, phosphor-bronze, iron, aluminium, nickel-cobaltiron alloy or nickel and the die lands being of gold, nickel or aluminium. The die, which is of silicon, contains a number of devices mutually isolated by reverse biased junctions. The semiconductor article is finally encapsulated in glass or plastics, or mounted on a header and encased A terminal lead network, Fig. 2, not shown, may be used to connect with the fingers bonded to the die lands. These fingers each have a notch on the underside adjacent to the end connecting with the lands to prevent them shortcircuiting to the edge of the die, and may have a flexible curved section to accommodate changes in length due to expansion and contraction. |
