| 摘要 |
PURPOSE: A method for manufacturing the slurry for a CMP(Chemical Mechanical Polishing) process is provided to be capable of preventing the reliability deterioration of a device due to a mobile ion, improving CMP removal-rate, and reducing the defect caused by the CMP process. CONSTITUTION: After forming an STI(Shallow Trench Isolation) layer at a semiconductor substrate, the first insulating layer is formed at the upper portion of the resultant structure. Then, the first annealing process is carried out at the first insulating layer. After sequentially forming a gate and the second insulating layer at the upper portion of the first insulating layer, the second annealing process is carried out at the second insulating layer. After carrying out a CMP process at the resultant structure, a post-cleaning process is carried out. At this time, RbOH, CsOH, and Ba(OH)2 are used as a pH stabilizer of a CMP slurry.
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