| 摘要 |
PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to complete heat treatment through one-time laser irradiation, thereby improving the productivity and reducing the cost for maintaining and managing a laser equipment. CONSTITUTION: An amorphous silicon layer is formed on an insulating substrate. The amorphous silicon layer is converted into polycrystalline silicon layers by scanning the amorphous silicon layer with a laser having the energy density completely capable of melting the amorphous silicon layer and having a predetermined beam width. Gate lines(121,123a,123b,133) are formed. Data lines(171a,171b,173a,173b,175a,175b) are formed. When the amorphous silicon layer is converted into the polycrystalline silicon layers, laser scanning is proceeded following the data lines and the predetermined beam with is integer times as wide as a distance between the date lines. |
