SEMICONDUCTOR DEVICE HAVING CYLINDRICAL TYPE CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device having a cylindrical type capacitor and a method for manufacturing the same are provided to be capable of preventing the fall-down phenomenon of a storage node by increasing the contact surface between the storage node and an insulating layer at the inner portion of a BC(Buried Contact) hole. CONSTITUTION: A semiconductor device having a cylindrical type capacitor is provided with a semiconductor substrate(101), the first poly layer pattern(103) formed at the upper portion of the semiconductor substrate, an insulating layer(102), a BC hole(105) formed at the upper portion of the first poly layer pattern, the second poly layer(106), a sputter layer(107), and a storage node(113-1) formed at the upper portion of the resultant structure. At this time, the lower portion(112) of the storage node is formed at the inner portion of the BC hole.