Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure

摘要

Indium aluminum gallium nitride light-emitting device comprises: a host substrate; a light-emitting structure including device layers of a first and second polarity near the top of the substrate; first device contact on top of the light-emitting structure; wafer bonding layer between substrate and light emitting structure; and a second device contact on the bottom of light-emitting structure. An indium aluminum gallium nitride (InAlGaN) light-emitting device comprises: a host substrate (12); an indium aluminum gallium nitride (InAlGaN) light-emitting structure (20), including device layers of a first and second polarity (20a, 20b), near the top of the substrate; a first device contact (22) on top of the InAlGaN light-emitting structure; a wafer bonding layer (16) between the host substrate and the InAlGaN structure; and a second device contact (18), positioned within or adjacent to the wafer bonding layer, electrically connected to the bottom of the InAlGaN light-emitting structure. An independent claim is also included for a method of forming a vertical conducting InAlGaN light-emitting device.