Schottky gate field effect transistor

摘要

A Schottky gate FET including a gate electrode (15) having a gate extension (16), a drain electrode (17) and a drain contact layer (14b) overlying a semi-dielectric substrate (11), wherein the gate extension (16) overlies at least part of the drain electrode (17) and the drain contact layer (14b). The vertical overlapping between the gate extension (16) and the drain contact region (Dc) prevents the current reduction to make the circuit module mounting the Schottky gate FET non-usable.