发明名称 |
Method of manufacturing and structure of semiconductor device with floating ring structure |
摘要 |
A high voltage semiconductor device includes a drain region disposed within a semiconductor substrate. The semiconductor device further includes a field oxide layer disposed outwardly from the drain region of the semiconductor substrate. The semiconductor device also includes a floating ring structure disposed inwardly from at least a portion of the field oxide layer. In one particular embodiment, a device parameter degradation associated with the semiconductor device comprises one (1) percent or less after approximately five hundred (500) seconds of accelerated lifetime operation.
|
申请公布号 |
US6670685(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20020155543 |
申请日期 |
2002.05.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PENDHARKAR SAMEER P. |
分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|