| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of simplifying an etching process by etching an organic anti-reflective coating and a lower metal layer using one etching chamber alone. CONSTITUTION: An interlayer dielectric(20) is deposited at the upper portion of a semiconductor substrate(10). A lower metal layer(40) and an upper barrier metal layer(50) are sequentially deposited at the upper portion of the interlayer dielectric. Then, an organic anti-reflective coating is deposited at the upper portion of the upper barrier metal layer. After forming a predetermined photoresist pattern at the upper portion of the organic anti-reflective coating, the organic anti-reflective coating, the upper barrier metal layer, and the lower metal layer are sequentially etched by in-situ using the predetermined photoresist pattern as an etching mask. Then, a metal line pattern is formed by removing the photoresist pattern and the remaining organic anti-reflective coating.
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