Semiconductor memory device and test method thereof using row compression test mode

摘要

A circuit and method for testing a semiconductor memory device using a row compression test mode is provided. The testing circuit includes at least one equalizer circuit for supplying a first voltage level to one of at least one true bitline or at least one complement bitline during a test mode; an equalizing line for coupling a plurality of equalizer circuits along a wordline; and a comparator for comparing a second voltage on the equalizing line during the test mode to a reference voltage, wherein if the second voltage is less than the reference voltage, the wordline is defective.