Method and apparatus for discharging an array well in a flash memory device

摘要

A flash memory device is disclosed in which an erase voltage is applied to a well containing flash memory transistors during an erase operation. The well is then discharged toward ground, first by one discharge circuit which discharges the well until the voltage on the well is lower than a snap-back characteristic of a transistor employed in another well discharge circuit. After the well voltage is below the snap-back characteristic of the transistor, the well is discharged by the other discharge circuit.